symbol v ds v gs i dm t j , t stg symbol ty p max 63 83 101 130 r jl 64 83 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 5.7 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.5 0.96 -55 to 150 t a =70c i d 7 AO8822 common-drain dual n-channel enhancement mode field effect transistor features v ds (v) = 20v i d = 7 a (v gs = 10v) r ds(on) < 21m ? (v gs = 10v) r ds(on) < 24m ? (v gs = 4.5v) r ds(on) < 32m ? (v gs = 2.5v) r ds(on) < 50m ? (v gs = 1.8v) g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 general description the AO8822 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. standard product AO8822 is pb-free (meets rohs & sony 259 specifications). AO8822l is a green product ordering option. AO8822 and AO8822l are electrically identical. alpha & omega semiconductor, ltd.
AO8822 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na bv gso 12 v v gs(th) 0.5 0.8 1 v i d(on) 30 a 16.4 21 t j =125c 23 28 19 24 m ? 25 32 m ? 36 50 m ? g fs 24 s v sd 0.7 1 v i s 2.5 a c iss 630 pf c oss 164 pf c rss 137 pf r g 1.5 ? q g 9.3 nc q gs 0.6 nc q gd 3.6 nc t d(on) 5.7 ns t r 11.5 ns t d(off) 31.5 ns t f 9.7 ns t rr 15.2 ns q rr 6.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance gate-source breakdown voltage v ds =0v, i g =250ua turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.4 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =7a gate source charge m ? v gs =2.5v, i d =5.5a i s =1a,v gs =0v v ds =5v, i d =7a v gs =1.8v, i d =2a v gs =4.5v, i d =6.6a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250ua v ds =16v, v gs =0v zero gate voltage drain current v ds =0v, v gs =10v gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =7a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =7a reverse transfer capacitance i f =7a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the currentand power rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1: june 2005 alpha & omega semiconductor, ltd.
AO8822 typical electrical and thermal characteristic s 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1.5v v gs =2v 3v 4v 10v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 0 10 20 30 40 50 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v v gs =10v 0.8 1.0 1.2 1.4 1.6 0 50 100 150 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =6.6a i d =5.5a i d =2a v gs =10v i d =7a 10 20 30 40 50 60 70 80 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c i d =7a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c alpha & omega semiconductor, ltd.
AO8822 typical electrical and thermal characteristic s 0 1 2 3 4 5 0246810 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =7a 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =83c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 100 s 10ms 1ms dc r ds(on) limited t j(max) =150c, t a =25c 100m 1s 10s alpha & omega semiconductor, ltd.
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